The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electron
ic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
Integral neutronics experiments have been investigated at Institute of Modern Physics, Chinese Academy of Sciences (IMP, CAS) in order to validate evaluated nuclear data related to the design of Chinese Initiative Accelerator Driven Systems (CIADS).
In present paper, the accuracy of evaluated nuclear data for Tungsten has been examined by comparing measured leakage neutron spectra with calculated ones. Leakage neutron spectra from the irradiation of D-T neutrons on Tungsten slab sample were experimentally measured at 60$^{circ}$ and 120$^{circ}$ by using a time-of-flight method. Theoretical calculations are carried out by Monte Carlo neutron transport code MCNP-4C with evaluated nuclear data of the ADS-2.0, ENDF/B-VII.0, ENDF/B-VII.1, JENDL-4.0 and CENDL-3.1 libraries. From the comparisons, it is found that the calculations with ADS-2.0 and ENDF/B-VII.1 give good agreements with the experiments in the whole energy regions at 60$^{circ}$, while a large discrepancy is observed at 120$^{circ}$ in the elastic scattering peak, caused by a slight difference in the oscillation pattern of the elastic angular distribution at angles larger than 20$^{circ}$. However, the calculated spectra using data from ENDF/B-VII.0, JENDL-4.0 and CENDL-3.1 libraries showed larger discrepancies with the measured ones, especially around 8.5-13.5 MeV. Further studies are presented for these disagreements.
Many superconducting qubits are highly sensitive to dielectric loss, making the fabrication of coherent quantum circuits challenging. To elucidate this issue, we characterize the interfaces and surfaces of superconducting coplanar waveguide resonator
s and study the associated microwave loss. We show that contamination induced by traditional qubit lift-off processing is particularly detrimental to quality factors without proper substrate cleaning, while roughness plays at most a small role. Aggressive surface treatment is shown to damage the crystalline substrate and degrade resonator quality. We also introduce methods to characterize and remove ultra-thin resist residue, providing a way to quantify and minimize remnant sources of loss on device surfaces.
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates
extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces.
Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with
mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.
The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite i
nsulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel {gamma}-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.
The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However
, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel {gamma}-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
Future generations of photoelectrodes for solar fuel generation must employ inexpensive, earth-abundant absorber materials in order to provide a large-scale source of clean energy. These materials tend to have poor electrical transport properties and
exhibit carrier diffusion lengths which are significantly shorter than the absorption depth of light. As a result, many photo-excited carriers are generated too far from a reactive surface, and recombine instead of participating in solar-to-fuel-conversion. We demonstrate that plasmonic resonances in metallic nanostructures and multi-layer interference effects can be engineered to strongly concentrate sunlight close to the electrode/liquid interface, precisely where the relevant reactions take place. By comparing spectral features in the enhanced photocurrent spectra to full-field electromagnetic simulations, the contribution of surface plasmon excitations is verified. These results open the door to the optimization of a wide variety of photochemical processes by leveraging the rapid advances in the field of plasmonics.
Isotope yields have been analyzed within the framework of a Modified Fisher Model to study the power law yield distribution of isotopes in the multifragmentation regime. Using the ratio of the mass dependent symmetry energy coefficient relative to th
e temperature, $a_{sym}/T$, extracted in previous work and that of the pairing term, $a_{p}/T$, extracted from this work, and assuming that both reflect secondary decay processes, the experimentally observed isotope yields have been corrected for these effects. For a given I = N - Z value, the corrected yields of isotopes relative to the yield of $^{12}C$ show a power law distribution, $Y(N,Z)/Y(^{12}C) sim A^{-tau}$, in the mass range of $1 le A le 30$ and the distributions are almost identical for the different reactions studied. The observed power law distributions change systematically when I of the isotopes changes and the extracted $tau$ value decreases from 3.9 to 1.0 as I increases from -1 to 3. These observations are well reproduced by a simple de-excitation model, which the power law distribution of the primary isotopes is determined to $tau^{prim} = 2.4 pm 0.2$, suggesting that the disassembling system at the time of the fragment formation is indeed at or very near the critical point.
We discuss experimental evidence for a nuclear phase transition driven by the different concentration of neutrons to protons. Different ratios of the neutron to proton concentrations lead to different critical points for the phase transition. This is
analogous to the phase transitions occurring in 4He-3He liquid mixtures. We present experimental results which reveal the N/A (or Z/A) dependence of the phase transition and discuss possible implications of these observations in terms of the Landau Free Energy description of critical phenomena.
