The local structure of V$_{2}$O$_{3}$, an archetypal strongly correlated electron system that displays a metal-insulator transition around 160 K, has been investigated via pair distribution function (PDF) analysis of neutron and x-ray total scatterin
g data. The rhombohedral-to-monoclinic structural phase transition manifests as an abrupt change on all length scales in the observed PDF. No monoclinic distortions of the local structure are found above the transition, although coexisting regions of phase-separated rhombohedral and monoclinic symmetry are observed between 150 K and 160 K. This lack of structural fluctuations above the transition contrasts with the known presence of magnetic fluctuations in the high-temperature state, suggesting that the lattice degree of freedom plays a secondary role behind the spin degree of freedom in the transition mechanism.
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambi
ent environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied the resistive switching properties of both pristine and ion-irradiated VO2 thin film devices by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically-driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs non-thermally, well below the transition temperature. Our results provide the first direct evidence for non-thermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.
We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation, x-ray diffr
action, and nanoscale-resolved near-field infrared spectroscopic techniques. The measurements provide a detailed characterization of the thermal evolution of the magnetic, structural, and electronic phase transitions occurring in a wide temperature range, including quantitative measurements of the high- and low-temperature phase fractions for each transition. The results reveal a stable coexistence of the high- and low-temperature phases over a broad temperature range throughout the transition. Careful comparison of temperature dependence of the different measurements, calibrated by the resistance of the sample, demonstrates that the electronic, magnetic, and structural degrees of freedom remain tightly coupled to each other during the transition process. We also find evidence for antiferromagnetic fluctuations in the vicinity of the phase transition, highlighting the important role of the magnetic degree of freedom in the metal-insulator transition.
Considerable evidence for proximity-induced triplet superconductivity on the ferromagnetic side of a superconductor-ferromagnet (S-F) interface now exists; however, the corresponding effect on the superconductor side has hardly been addressed. We hav
e performed scanning tunneling spectroscopy measurements on NbN superconducting thin films proximity coupled to the half-metallic ferromagnet La2/3Ca1/3MnO3 (LCMO) as a function of magnetic field. We have found that at zero and low applied magnetic fields the tunneling spectra on NbN typically show an anomalous gap structure with suppressed coherence peaks and, in some cases, a zero-bias conductance peak. As the field increases to the magnetic saturation of LCMO where the magnetization is homogeneous, the spectra become more BCS-like and the critical temperature of the NbN increases, implying a reduced proximity effect. Our results therefore suggest that triplet-pairing correlations are also induced in the S side of an S-F bilayer.
The temperature evolution of the proximity effect in Au/La$_{2-x}$Sr$_x$CuO$_4$ and La$_{1.55}$Sr$_{0.45}$CuO$_4$/La$_{2-x}$Sr$_x$CuO$_4$ bilayers was investigated using scanning tunneling microscopy. Proximity induced gaps, centered at the chemical
potential, were found to persist above the superconducting transition temperature, $T_c$, and up to nearly the pseudogap crossover temperature in both systems. Such independence of the spectra on the details of the normal metal cap layer is incompatible with a density-wave order origin. However, our results can be accounted for by a penetration of incoherent Cooper pairs into the normal metal above $T_c$.
