We investigate nonlinear transport in electronic Fabry-Perot interferometers in the integer quantum Hall regime. For interferometers sufficiently large that Coulomb blockade effects are absent, a checkerboard-like pattern of conductance oscillations
as a function of dc bias and perpendicular magnetic field is observed. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E x B drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.
Two distinct types of magnetoresistance oscillations are observed in two electronic Fabry-Perot interferometers of different sizes in the integer quantum Hall regime. Measuring these oscillations as a function of magnetic field and gate voltages, we
observe three signatures that distinguish the two types. The oscillations observed in a 2.0 square micron device are understood to arise from the Coulomb blockade mechanism, and those observed in an 18 square micron device from the Aharonov-Bohm mechanism. This work clarifies, provides ways to distinguish, and demonstrates control over, these distinct physical origins of resistance oscillations seen in electronic Fabry-Perot interferometers.
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between
0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.
We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias, shot noise a
t zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus (where shot noise vanishes), agrees quantitatively with a model of bias-dependent electron heating.
