Here, we demonstrate two reliable routes for the fabrication of armchair-edge graphene nanoribbons (GNRs) on TbAu2/Au(111), belonging to a class of two-dimensional ferromagnetic rare earth-gold intermetallic compounds. On-surface synthesis directly o
n TbAu2 leads to the formation of GNRs, which are short and interconnected with each other. In contrast, the intercalation approach - on-surface synthesis of GNRs directly on Au(111) followed by rare earth intercalation - yields GNRs on TbAu2/Au(111), where both the ribbons and TbAu2 are of high quality comparable with those directly grown on clean Au(111). Besides, the as-grown ribbons retain the same band gap while changing from p-doping to weak n-doping mainly due to a change in the work function of the substrate after the rare earth intercalation. The intercalation approach might also be employed to fabricate other types of GNRs on various rare earth intermetallic compounds, providing platforms to tailor the electronic and magnetic properties of GNRs on magnetic substrates.
Surface alloying is a straightforward route to control and modify the structure and electronic properties of surfaces. Here, We present a systematical study on the structural and electronic properties of three novel rare earth-based intermetallic com
pounds, namely ReAu2 (Re = Tb, Ho, and Er), on Au(111) via directly depositing rare-earth metals onto the hot Au(111) surface. Scanning tunneling microscopy/spectroscopy measurements reveal the very similar atomic structures and electronic properties, e.g. electronic states, and surface work functions, for all these intermetallic compound systems due to the physical and chemical similarities between these rare earth elements. Further, these electronic properties are periodically modulated by the moire structures caused by the lattice mismatches between ReAu2 and Au(111). These periodically modulated surfaces could serve as templates for the self-assembly of nanostructures. Besides, these two-dimensional rare earth-based intermetallic compounds provide platforms to investigate the rare earth related catalysis, magnetisms, etc., in the lower dimensions.
The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(000
1) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.
Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria
-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic technique, showing high promise for applications in future micro- and nano-electronic devices.
Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The l
attice mismatch between the two layers leads to the formation of a moire pattern with a periodicity of ~21.5 nm and a mixture of AA- and AB-stacking. The root3 x root3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized pi-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene.
