Based on the Born-Oppemheimer approximation, we divide total electron Hamiltonian in a spinorbit coupled system into slow orbital motion and fast interband transition process. We find that the fast motion induces a gauge field on slow orbital motion,
perpendicular to electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificial gauge field and topological phase in a conventional two-dimensional electron gas embedded in parabolically graded GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum wells with antidot lattices. By tuning the etching depth and period of antidot lattices, the band folding caused by superimposed potential leads to formation of minibands and band
