The magnetic domain wall motion driven by a magnetic field is studied in (Ga,Mn)As and (Ga,Mn)(As,P) films of different thicknesses. In the thermally activated creep regime, a kink in the velocity curves and a jump of the roughness exponent evidence
a dimensional crossover in the domain wall dynamics. The measured values of the roughness exponent zeta_{1d} = 0.62 +/- 0.02 and zeta_{2d} = 0.45 +/- 0.04 are compatible with theoretical predictions for the motion of elastic line (d = 1) and surface (d = 2) in two and three dimensional media, respectively.
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate
a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.
The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex
systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.
