The electronic structure of bulk fcc GaAs, fcc and tetragonal CrAs, and CrAs/GaAs supercells, computed within LMTO local spin-density functional theory, is used to extract the band alignment (band offset) for the [1,0,0] GaAs/CrAs interface in depend
ence of the spin orientation. With the lateral lattice constant fixed to the experimental bulk GaAs value, a local energy minimum is found for a tetragonal CrAs unit cell with a slightly ($approx$ 2%) reduced longitudinal ([1,0,0]) lattice constant. Due to the identified spin-dependent band alignment, half-metallicity of CrAs no longer is a key requirement for spin-filtering. Encouraged by these findings, we study the spin-dependent tunneling current in [1,0,0] GaAs/CrAs/GaAs heterostructures within the non-equilibrium Greens function approach for an effective tight-binding Hamiltonian derived from the LMTO electronic structure. Results indicate that these heterostructures are probable candidates for efficient room-temperature all-semiconductor spin-filtering devices.
Recent experiments on resonant tunneling structures comprising (Ga,Mn)As quantum wells [Ohya et al., Nature Physics 7, 342 (2011)] have evoked a strong debate regarding their interpretation as resonant tunneling features and the near absences of ferr
omagnetic order observed in these structures. Here, we present a related theoretical study of a GaAs/(Ga,Mn)As double barrier structure based on a Greens function approach, studying the self-consistent interplay between ferromagnetic order, structural defects (disorder), and the hole tunnel current under conditions similar to those in experiment. We show that disorder has a strong influence on the current-voltage characteristics in efficiently reducing or even washing out negative differential conductance, offering an explanation for the experimental results. We find that for the Be lead doping levels used in experiment the resulting spin density polarization in the quantum well is too small to produce a sizable exchange splitting.
A scheme for probabilistic entanglement generation between two distant single electron doped quantum dots, each placed in a high-Q microcavity, by detecting strong coherent light which has interacted dispersively with both subsystems and experienced
Faraday rotation due to the spin selective trion transitions is discussed. In order to assess the applicability of the scheme for distant entanglement generation between atomic qubits proposed by T.D. Ladd et al. [New J. Phys. 8, 184 (2006)] to two distant quantum dots, one needs to understand the limitations imposed by hyperfine interactions of the quantum dot spin with the nuclear spins of the material and by non-identical quantum dots. Feasibility is displayed by calculating the fidelity for Bell state generation analytically within an approximate framework. The fidelity is evaluated for a wide range of parameters and different pulse lengths, yielding a trade-off between signal and decoherence, as well as a set of optimal parameters. Strategies to overcome the effect of non-identical quantum dots on the fidelity are examined and the timescales imposed by the nuclear spins are discussed, showing that efficient entanglement generation is possible with distant quantum dots. In this context, effects due to light hole transitions become important and have to be included. The scheme is discussed for one- as well as for two-sided cavities, where one must be careful with reflected light which carries spin information. The validity of the approximate method is checked by a more elaborate semiclassical simulation which includes trion formation.
