Topological insulators are materials characterized by dissipationless, spin-polarized surface states resulting from non-trivial band topologies. Recent theoretical models and experiments suggest that SmB6 is the first topological Kondo insulator, in
which the topologically non-trivial band structure results from electron-electron interactions via Kondo hybridization. Here, we report that the surface conductivity of SmB6 increases systematically with bulk carbon content. Further, addition of carbon is linked to an increase in n-type carriers, larger low temperature electronic contributions to the specific heat with a characteristic temperature scale of T* = 17 K, and a broadening of the crossover to the insulating state. Additionally, X-ray absorption spectroscopy shows a change in Sm valence at the surface. Our results highlight the importance of phonon dynamics in producing a Kondo insulating state and demonstrate a correlation between the bulk thermodynamic state and low temperature resistance of SmB6.
Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 {mu}V/K), but the thermoelec
tric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity ({kappa}(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 {mu}V/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.
