Auger recombination (AR) of the ground biexciton state in quantum-confined lead salt nanowires (NWs) with a strong coupling between the conduction and the valence bands is shown to be strongly suppressed, and only excited biexciton states contribute
to Auger decay. The AR rate is predicted to be greatly reduced when temperature or the NW radius are decreased, and the effect is explained by decrease in both the population of excited biexciton states and overlap of phonon-broadened single- and biexciton states. Suppression of AR of multiexciton states exhibiting strong radiative decay makes obviously lead salt NWs a subject of special interest for numerous lasing applications.
In the framework of four-band envelope-function formalism, developed earlier for spherical semiconductor nanocrystals, we study the electronic structure and optical properties of quantum-confined lead-salt (PbSe and PbS) nanowires (NWs) with a strong
coupling between the conduction and the valence bands. We derive spatial quantization equations, and calculate numerically energy levels of spatially quantized states of a transverse electron motion in the plane perpendicular to the NW axis, and electronic subbands developed due to a free longitudinal motion along the NW axis. Using explicit expressions for eigenfunctions of the electronic states, we also derive analytical expressions for matrix elements of optical transitions and study selection rules for interband absorption. Next we study a two-particle problem with a conventional long-range Coulomb interaction and an interparticle coupling via medium polarization. The obtained results show that due to a large magnitude of the high-frequency dielectric permittivity of PbSe material, and hence, a high dielectric NW/vacuum contrast, the effective coupling via medium polarization significantly exceeds the effective direct Coulomb coupling at all interparticle separations along the NW axis. Furthermore, the strong coupling via medium polarization results in a bound state of the longitudinal motion of the lowest-energy electron-hole pair (a longitudinal exciton), while fast transverse motions of charge carriers remain independent of each other.
We propose a novel mechanism for photogeneration of multiexcitons by single photons (carrier multiplication) in semiconductor nanocrystals. In this mechanism, the Coulomb interaction between two valence-band electrons involving their transfer to the
conduction band creates a virtual biexciton from vacuum that is then converted into a real biexciton by photon absorption on an intraband optical transition. This mechanism is inactive in bulk semiconductors as momentum conservation suppresses intraband absorption. However, it becomes highly efficient in zero-dimensional nanocrystals and can provide a significant contribution to carrier multiplication in these materials.
