A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determi
ne the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of two models: LO-phonon assisted tunneling and resonant tunneling of polarons.
The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing m
agnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental results revealing the pseudogap in the electron tunneling assisted by elastic electron scattering on disorder.
Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted by the el
astic scattering on impurities in the barrier layer. These peaks are shown to shift to the higher voltage due to the Coulomb pseudogap in the intermediate fields. In the high magnetic fields the pseudogap shift is disappeared.
