The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase int
o an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent states long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.
The magnetic ground state of the hyper-kagome lattice in Na4Ir3O8 is explored via combined bulk magnetization, muon spin relaxation, and neutron scattering measurements. A short-range, frozen, state comprised of quasi-static moments develops below a
characteristic temperature of T_F=6 K, revealing an inhomogeneous distribution of spins occupying the entirety of the sample volume. Quasi-static, short-range, spin correlations persist until at least 20 mK and differ substantially from the nominally dynamic response of a quantum spin liquid. Our data demonstrate that an inhomogeneous magnetic ground state arises in Na4Ir3O8 driven either by disorder inherent to the creation of the hyper-kagome lattice itself or stabilized via quantum fluctuations.
Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems potential of r
ealizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.
Neutron diffraction measurements are presented exploring the magnetic and structural phase behaviors of the candidate J$_{eff}=1/2$ Mott insulating iridate Sr$_2$IrO$_4$. Comparisons are drawn between the correlated magnetism in this single layer sys
tem and its bilayer analog Sr$_3$Ir$_2$O$_7$ where both materials exhibit magnetic domains originating from crystallographic twinning and comparable moment sizes. Weakly temperature dependent superlattice peaks violating the reported tetragonal space group of Sr$_2$IrO$_4$ are observed supporting the notion of a lower structural symmetry arising from a high temperature lattice distortion, and we use this to argue that moments orient along a unique in-plane axis demonstrating an orthorhombic symmetry in the resulting spin structure. Our results demonstrate that the correlated spin order and structural phase behaviors in both single and bilayer Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ systems are remarkably similar and suggest comparable correlation strengths in each system.
