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تسجيل مستخدم جديدCarrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7
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Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.
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One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively researche
d, but its governing mechanisms have yet to be fully understood. Several theoretical proposals aimed to elucidate the nature of the transition have been put forth, a notable one being phase separation and an associated percolation-induced transition. In the present work, we study the prototypical doped Mott-insulating rare-earth titanate YTiO$_3$, in which the insulating state survives up to a large hole concentration of 35%. Single crystals of Y$_{1-x}$Ca$_x$TiO$_3$ with $0 leq x leq 0.5$, spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with DFT+$U$ calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the Mott-insulating $x = 0$ and metallic $x sim 0.5$ states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the hole-doping-induced insulator-metal transition in Y$_{1-x}$Ca$_x$TiO$_3$ is indeed percolative in nature, and thus of inherent first-order character.
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition meta
l compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.
From measurements of fluctuation spectroscopy and weak nonlinear transport on the semimetallic ferromagnet EuB$_6$ we find direct evidence for magnetically-driven electronic phase separation consistent with the picture of percolation of magnetic pola
rons (MP), which form highly conducting magnetically-ordered clusters in a paramagnetic and poorly conducting background. These different parts of the conducting network are probed separately by the noise spectroscopy/nonlinear transport and the conventional linear resistivity. We suggest a comprehensive and universal scenario for the MP percolation, which occurs at a critical magnetization either induced by ferromagnetic order at zero field or externally applied magnetic fields in the paramagentic region.
A hole injected into a Mott insulator will gain an internal structure as recently identified by exact numerics, which is characterized by a nontrivial quantum number whose nature is of central importance in understanding the Mott physics. In this wor
k, we show that a spin texture associated with such an internal degree of freedom can explicitly manifest after the spin degeneracy is lifted by a emph{weak} Rashba spin-orbit coupling (SOC). It is described by an emergent angular momentum $J_{z}=pm3/2$ as shown by both exact diagonalization (ED) and variational Monte Carlo (VMC) calculations, which are in good agreement with each other at a finite size. In particular, as the internal structure such a spin texture is generally present in the hole composite even at high excited energies, such that a corresponding texture in momentum space, extending deep inside the Brillouin zone, can be directly probed by the spin-polarized angle-resolved photoemission spectroscopy (ARPES). This is in contrast to a Landau quasiparticle under the SOC, in which the spin texture induced by SOC will not be protected once the excited energy is larger than the weak SOC coupling strength, away from the Fermi energy. We point out that the spin texture due to the SOC should be monotonically enhanced with reducing spin-spin correlation length in the superconducting/pseudogap phase at finite doping. A brief discussion of a recent experiment of the spin-polarized ARPES will be made.
The motion of a single hole in a Mott antiferromagnet is investigated based on the t-J model. An exact expression of the energy spectrum is obtained, in which the irreparable phase string effect [Phys. Rev. Lett. 77, 5102 (1996)] is explicitly presen
t. By identifying the phase string effect with spin backflow, we point out that spin-charge separation must exist in such a system: the doped hole has to decay into a neutral spinon and a spinless holon, together with the phase string. We show that while the spinon remains coherent, the holon motion is deterred by the phase string, resulting in its localization in space. We calculate the electron spectral function which explains the line shape of the spectral function as well as the ``quasiparticle spectrum observed in angle-resolved photoemission experiments. Other analytic and numerical approaches are discussed based on the present framework.
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