We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resona
nce and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.
We investigated the localized electronic properties of nanoporous gold films by using an ultra-high vacuum scanning tunneling microscope at low temperature (4.2 K). Second derivative scanning tunneling spectroscopy shows the plasmon peaks of the nano
porous gold films, which are excited by inelastic tunneling electrons. We propose that the nanorod model is appropriate for nanoporous gold studies at the nanometer-scale. These results are supported by a 3D electron tomography analysis and theoretical calculations of nanoporous gold with ellipsoid shape.
We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photo
n energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states.
Raman spectra of polycrystalline NdFeAsO1-xFx (x=0.0, 0.1, 0.2) compound have been systematically investigated as functions of temperature and fluorine concentration. Scanning electron microscopic and Raman microscopic characterization demonstrates t
hat the polycrystalline samples mainly contain two phases, i.e. superconductor NdFeAsO1-xFx compound and a MnP-type FeAs phase, with dissimilar characteristic Raman bands. It was found that fluorine doping leads to structure disorder in the insulator Nd-O layers and high temperature coefficient of Fe-As vibrational mode.
