Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide

We calculate the electron excitation in cubic silicon carbide (3C-SiC) caused by the intense femtosecond laser double pulses using time-dependent density functional theory (TDDFT). We assume the electron distributions in the valence band (VB) and the conduction band (CB) based on three different approaches to determine the dependence of the plasma that is formed on the excitation by the first pulse. First, we consider the simple double pulse irradiation, which does not include the electron-electron collisions and relaxation. Second, we consider the partially thermalized electronic state, in which the electron temperatures and numbers in the VB and the CB are defined independently. This assumption corresponds to the plasma before the electron-hole collisions becomes dominant. The third approach uses the fully thermalized electron distribution, which corresponds to a timescale of hundreds fs. Our results indicate that the simple double pulse approach is the worst of the three, and show that the plasma formation changes the efficiency of the excitation by the second pulse. When the electron temperature decreases, the laser excitation efficiency increases as a result.

Theory for the electron excitation in dielectrics under an intense circularly polarized laser field

We report a Keldysh-like model for the electron transition rate in dielectrics under an intense circularly polarized laser. We assume a parabolic two-band system and the Houston function as the time-dependent wave function of the valence and conduction bands. Our formula reproduces the experimental result for the ratio of the excitation rate between linear and circular polarizations for $alpha$-quartz. This formula can be easily introduced into simulations of nanofabrication using an intense circularly polarized laser.

Sub-Cycle Optical Response Caused by Dressed State with Phase-Locked Wavefunctions

The coherent interaction of light with matter imprints the phase information of the light field on the wavefunction of the photon-dressed electronic state. Driving electric field, together with a stable phase that is associated with the optical probe pulses, enables the role of the dressed state in the optical response to be investigated. We observed optical absorption strengths modulated on a sub-cycle timescale in a GaAs quantum well in the presence of a multi-cycle terahertz driving pulse using a near-infrared probe pulse. The measurements were in good agreement with the analytical formula that accounts for the optical susceptibilities caused by the dressed state of excitons, which indicates that the output probe intensity was coherently reshaped by the excitonic sideband emissions.