This paper presents some observations and ideas collected during the tests of the SOI sensors, based on the integration type pixels. First, it contains a rough analysis of the Correlated Double Sampling filtering properties with respect to different
noise sources and long sampling intervals, which are typical for the pixels under consideration. Second, results of the pixel leakage current measurements in the pix_2012 and DIPIX pixel detector chips are presented.
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (
MIP) tracking in particle physics experiments. For this reason few differe
