The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the systems level of disorder. How
ever, this proposition seems to break down in field-effect transistors involving SrTiO$_3$ (STO) based two-dimensional electron gases. Such peculiar behavior is associated with the electron trapping under an external electric field. However, the microscopic nature of trapping centers remains an open question. In this paper, we investigate electric field-induced charge trapping/detrapping phenomena at the conducting interface between band insulators $gamma$-Al$_2$O$_3$ and STO. Our transport measurements reveal that the charge trapping under +ve back gate voltage ($V_g$) above the tetragonal to cubic structural transition temperature ($T_c$) of STO is contributed by the electric field-assisted thermal escape of electrons from the quantum well, and the clustering of oxygen vacancies (OVs) as well. We observe an additional source of trapping below the $T_c$, which arises from the trapping of free carriers at the ferroelastic twin walls of STO. Application of -ve $V_g$ results in a charge detrapping, which vanishes above $T_c$ also. This feature demonstrates the crucial role of structural domain walls in the electrical transport properties of STO based heterostructures. The number of trapped (detrapped) charges at (from) the twin wall is controlled by the net polarity of the wall and is completely reversible with the sweep of $V_g$.
The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measureme
nt. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.
The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). Ho
wever, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermixing and oxygen vacancy (OV) etc. can be operative simultaneously. The presence of a heavy element makes KTaO$_3$ (KTO) based 2-DEG a potential platform to investigate spin orbit coupling driven novel electronic and magnetic phenomena. In this work, we investigate the sole effect of the OV, which makes KTO metallic. Our detailed textit{ab initio} calculations not only find partially filled conduction bands in the presence of an OV but also predict a highly localized mid-gap state due to the linear clustering of OVs around Ta. Photoluminescence measurements indeed reveal the existence of such mid-gap state and O $K$-edge X-ray absorption spectroscopy finds electron doping in Ta $t_{2g}^*$ antibonding states. This present work suggests that one should be cautious about the possible presence of OVs within KTO substrate in interpreting metallic behavior of KTO based 2-DEG.
High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$
)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO$_3$. Since both of these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of $A$-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.
The origin of simultaneous electronic, structural and magnetic transitions in bulk rare-earth nickelates ($RE$NiO$_3$) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure engineering
of these materials offers unique opportunity to decouple metal-insulator transition (MIT) from the magnetic transition. However, the evolution of underlying electronic properties across these decoupled transitions remains largely unexplored. In order to address this, we have measured Hall effect on a series of epitaxial NdNiO$_3$ films, spanning a variety of electronic and magnetic phases. We find that the MIT results in only partially gapped Fermi surface, whereas full insulating phase forms below the magnetic transition. In addition, we also find a systematic reduction of the Hall coefficient ($R_H$) in the metallic phase of these films with epitaxial strain and also a surprising transition to negative value at large compressive strain. Partially gapped weakly insulating, paramagnetic phase is reminiscence of pseudogap behavior of high $T_c$ cuprates. The precursor metallic phase, which undergoes transition to insulating phase is a non-Fermi liquid with the temperature exponent ($n$) of resistivity of 1, whereas the exponent increases to 4/3 in the non-insulating samples. Such nickelate phase diagram with sign-reversal of $R_H$, pseudo-gap phase and non Fermi liquid behavior are intriguingly similar to high $T_c$ cuprates, giving important guideline to engineer unconventional superconductivity in oxide heterostructure.
Perovskite nickelate heterostructure consisting of single unit cell of EuNiO$_3$ and LaNiO$_3$ have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic a
nd magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of EuNiO$_3$ layer. In sharp contrast to bulk LaNiO$_3$ or EuNiO$_3$, the superlattices grown under tensile strains exhibit metal to insulator transition (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to strain induced self-doping effect without any chemical doping.
