The form factor that yields the light-by-light scattering contribution to the muon anomalous magnetic moment is computed in lattice QCD+QED and QED. A non-perturbative treatment of QED is used and is checked against perturbation theory. The hadronic
contribution is calculated for unphysical quark and muon masses, and only the diagram with a single quark loop is computed. Statistically significant signals are obtained. Initial results appear promising, and the prospect for a complete calculation with physical masses and controlled errors is discussed.
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods
for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of methods that allow direct estimation of Dit in state-of-the-art FinFETs, addressing a critical industry need.