We experimentally investigate spin-orbit torques and spin pumping in NiFe/Pt bilayers with direct and interrupted interfaces. The damping-like and field-like torques are simultaneously measured with spin-torque ferromagnetic resonance tuned by a dc b
ias current, whereas spin pumping is measured electrically through the inverse spin Hall effect using a microwave cavity. Insertion of an atomically thin Cu dusting layer at the interface reduces the damping-like torque, field-like torque, and spin pumping by nearly the same factor of ~1.4. This finding confirms that the observed spin-orbit torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We also find that spin-current scattering at the NiFe/Pt interface contributes to additional enhancement in magnetization damping that is distinct from spin pumping.
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way
towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magnetoelectric coupling mechanisms. We directly observe, for the first time, in situ voltage driven O$^{2-}$ migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.6 erg/cm$^2$. We exploit the thermally-activated nature of ion migration to dramatically increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.
