Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by
femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of around 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability.
Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate
both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer structure of these ultra-thin oxide films. X-ray diffraction, atomic force microscopy, and IR experiments show that the multilayer films exhibit excellent inter-layer registry, little amount (<10%) of intercalated water, and unexpectedly large interlayer separations of about 9.35 {AA}. Density functional theory calculations show that the apparent contradiction of little water but large interlayer spacing in the graphene oxide films can be explained by considering a multilayer film formed by carbon layers presenting, at the nanoscale, a non-homogenous oxidation, where non-oxidized and highly oxidized nano-domains coexist and where a few water molecules trapped between oxidized regions of the stacked layers are sufficient to account for the observed large inter-layer separations. This work sheds light on both the vertical and intra-layer structure of graphene oxide films grown on silicon carbide, and more in general, it provides novel insight on the relationship between inter-layer spacing, water content, and structure of graphene/graphite oxide materials.
We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and
even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters.
Despite recent advances in understanding high-transition-temperature (high-T c) superconductors, there is no consensus on the origin of the superconducting glue: that is, the mediator that binds electrons into superconducting pairs. The main contende
rs are lattice vibrations (phonons) and spin-excitations with the additional possibility of pairing without mediators. In conventional superconductors, phonon-mediated pairing was unequivocally established by data from tunnelling experiments. Proponents of phonons as the high-T c glue were therefore encouraged by the recent scanning tunnelling microscopy experiments on hole-doped Bi2Sr2CaCu2O8-delta (BSCCO) that reveal an oxygen lattice vibrational mode whose energy is anticorrelated with the superconducting gap energy scale. Here we report high-resolution scanning tunnelling microscopy measurements of the electron-doped high-T c superconductor Pr0.88LaCe0.12CuO4 (PLCCO) (T c = 24 K) that reveal a bosonic excitation (mode) at energies of 10.5 plus/minus 2.5 meV. This energy is consistent with both spin-excitations in PLCCO measured by inelastic neutron scattering (resonance mode) and a low-energy acoustic phonon mode, but differs substantially from the oxygen vibrational mode identified in BSCCO. Our analysis of the variation of the local mode energy and intensity with the local gap energy scale indicates an electronic origin of the mode consistent with spin-excitations rather than phonons.
