We present an accurate measurement and a quantitative analysis of electron-beam induced displacements of carbon atoms in single-layer graphene. We directly measure the atomic displacement (knock-on) cross section by counting the lost atoms as a funct
ion of the electron beam energy and applied dose. Further, we separate knock-on damage (originating from the collision of the beam electrons with the nucleus of the target atom) from other radiation damage mechanisms (e.g. ionization damage or chemical etching) by the comparison of ordinary (12C) and heavy (13C) graphene. Our analysis shows that a static lattice approximation is not sufficient to describe knock-on damage in this material, while a very good agreement between calculated and experimental cross sections is obtained if lattice vibrations are taken into account.
Observations of topological defects associated with Stone-Wales-type transformations (i.e., bond rotations) in high resolution transmission electron microscopy (HRTEM) images of carbon nanostructures are at odds with the equilibrium thermodynamics of
these systems. Here, by combining aberration-corrected HRTEM experiments and atomistic simulations, we show that such defects can be formed by single electron impacts, and remarkably, at electron energies below the threshold for atomic displacements. We further study the mechanisms of irradiation-driven bond rotations, and explain why electron irradiation at moderate electron energies (sim100 keV) tends to amorphize rather than perforate graphene. We also show via simulations that Stone-Wales defects can appear in curved graphitic structures due to incomplete recombination of irradiation-induced Frenkel defects, similar to formation of Wigner-type defects in silicon.
