We study the polarization optical properties of microcavities with embedded (110)-oriented quantum wells. The spin dynamics of exciton polaritons in such structures is governed by the interplay of the spin-orbit splitting of exciton states, which is
odd in the in-plane momentum, and the longitudinal-transverse splitting of cavity modes, which is even in the momentum. We demonstrate the generation of polariton spin currents by linearly polarized optical pump and analyze the arising polariton spin textures in the cavity plane. Tuning the excitation spot size, which controls the polariton distribution in the momentum space, one obtains symmetric or asymmetric spin textures.
We develop a microscopic theory of spin relaxation of a two-dimensional electron gas in quantum wells with anisotropic electron scattering. Both precessional and collision-dominated regimes of spin dynamics are studied. It is shown that, in quantum w
ells with noncentrosymmetric scatterers, the in-plane and out-of-plane spin components are coupled: spin dephasing of carriers initially polarized along the quantum well normal leads to the emergence of an in-plane spin component even in the case of isotropic spin-orbit splitting. In the collision-dominated regime, the spin-relaxation-rate tensor is expressed in terms of the electric conductivity tensor. We also study the effect of an in-plane and out-of-plane external magnetic field on spin dephasing and show that the field dependence of electron spin can be very intricate.
We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spi
n lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes.
We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors
at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.
