Precursor MgB2 thin films were prepared on sapphire substrates by magnetron sputtering. Influence of ex-situ annealing process on superconducting MgB2 thin films roughness is discussed. Optimized annealing process of MgB precursor thin films in vacuu
m results in smooth superconducting MgB2 thin films with roughness below 10 nm, critical temperature Tcon = 31 K and transition width DTc less than 1 K. Nano-bridges based on the superconducting MgB2 thin films using optical and Focused Ion Beam lithography were prepared. Critical current density jc (4.2 K) measured on 50 nm wide strip was 7.3x106 A/cm2 and no significant loss of superconducting properties was detected. Resistance vs. temperature and critical current vs. temperature characteristics were measured on these structures using standard DC four probe measurements.
