We demonstrate that the transport characteristics of deep optical lattices with one or multiple off-resonant external energy offsets can be greatly-enhanced by modulating the lattice depth in an exotic way. We derive effective stationary models for o
ur proposed modulation schemes in the strongly interacting limit, where only one particle can occupy any given site. Afterwards we discuss the modifications necessary to recover transport when more than one particle may occupy the lattice sites. For the specific five-site lattices discussed, we numerically predict transport gains for ranging from $4.7times 10^6$ to $9.8times 10^{8}$.
We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate atomic transport across a variety of lattice configurations. We demonstrate how the behavior of an electronic diod
e, a field-effect transistor, and a bipolar junction transistor can be realized with neutral, ultracold atoms trapped in optical lattices. An analysis of the current fluctuations is provided for the case of the atomtronic diode. Finally, we show that it is possible to demonstrate AND logic gate behavior in an optical lattice.
We illustrate that open quantum systems composed of neutral, ultracold atoms in one-dimensional optical lattices can exhibit behavior analogous to semiconductor electronic circuits. A correspondence is demonstrated for bosonic atoms, and the experime
ntal requirements to realize these devices are established. The analysis follows from a derivation of a quantum master equation for this general class of open quantum systems.
