We study nonlocal resistance in an H-shaped two-dimensional HgTe/CdTe quantum well consist of injector and detector, both of which can be tuned in the quantum spin Hall or metallic spin Hall regime. Because of strong spin-orbit interaction, there alw
ays exist spin Hall effect and the nonlocal resistance in HgTe/CdTe quantum well. We find that when both detector and injector are in the quantum spin Hall regime, the nonlocal resistance is quantized at $0.25frac{h}{e^2}$, which is robust against weak disorder scattering and small magnetic field. While beyond this regime, the nonlocal resistance decreases rapidly and will be strongly suppressed by disorder and magnetic field. In the presence of strong magnetic field, the quantum spin Hall regime will be switched into the quantum Hall regime and the nonlocal resistance will disappear. The nonlocal signal and its various manifestation in different hybrid regimes originate from the special band structure of HgTe/CdTe quantum well, and can be considered as the fingerprint of the helical quantum spin Hall edge states in two-dimensional topological insulator.
We report on the injection of quantized pure spin current into quantum conductors. In particular, we propose an on demand single spin source generated by periodically varying the gate voltages of two quantum dots that are connected to a two dimension
al topological insulator via tunneling barriers. Due to the nature of the helical states of the topological insulator, one or several {it spin pair}s can be pumped out per cycle giving rise to a pure quantized alternating spin current. Depending on the phase difference between two gate voltages, this device can serve as an on demand single spin emitter or single charge emitter. Again due to the helicity of the topological insulator, the single spin emitter or charge emitter is dissipationless and immune to disorders. The proposed single spin emitter can be an important building block of future spintronic devices.
We propose carbon nanotubes (CNTs) with magnetic impurities as a versatile platform to achieve unconventional Kondo physics, where the CNT bath is gapped by the spin-orbit interaction and surface curvature. While the strong-coupling phase is inaccess
ible for the special case of half-filled impurities in neutral armchair CNTs, the system in general can undergo quantum phase transitions to the Kondo ground state. The resultant position-specific phase diagrams are investigated upon variation of the CNT radius, chirality, and carrier doping, revealing several striking features, e.g., the existence of a maximal radius for nonarmchair CNTs to realize phase transitions, and an interference-induced suppression of the Kondo screening. We show that by tuning the Fermi energy via electrostatic gating, the quantum critical region can be experimentally accessed.
The influence of dephasing on the quantum spin Hall effect (QSHE) is studied. In the absence of dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against the normal d
ephasing but fragile with the spin dephasing. Thus, these quantum plateaus only survive in mesoscopic samples. Moreover, the longitudinal resistance increases linearly with the sample length but is insensitive to the sample width. These characters are in excellent agreement with the recent experimental results [science {bf 318}, 766 (2007)]. In addition, we define a new spin Hall resistance that also exhibits quantum plateaus. In particular, these plateaus are robust against any type of dephasing and therefore, survive in macroscopic samples and better reflect the topological nature of QSHE.
Electron charge transport through a quantum point contact (QPC) driven by an asymmetric spin bias is studied. A large charge current is induced when the transmission coefficient of the QPC jumps from one integer plateau to the next. Furthermore, for
an open external circuit, the induced charge bias instead of the charge current is found to be quite large. It provides an efficient and practical way to detect spin bias by using a very simple device, a QPC or a STM tip. In addition, with the aid of magnetic field, polarization direction of the spin bias can also be determined.
We study the Nernst effect and the spin Nernst effect, that a longitudinal thermal gradient induces a transverse voltage and a spin current. A mesoscopic four-terminal cross-bar device having the Rashba spin-orbit interaction (SOI) under a perpendicu
lar magnetic field is considered. For zero SOI, the Nernst coefficient peaks when the Fermi level crosses the Landau Levels. In the presence of the SOI, the Nernst peaks split, and the spin Nernst effect appears and exhibits a series of oscillatory structures. The larger SOI is or the weaker magnetic field is, the more pronounced the spin Nernst effect is. The results also show that the Nernst and spin Nernst coefficients are sensitive to the detailed characteristics of the sample and the contacts. In addition, the Nernst effect is found to survive in strong disorder than the spin Nernst effect does.
It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the quantum dot.
It is found that the spin polarization in the left and right dots may be induced spontaneously while the intra-dot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit an charge bias instead of a charge current will be induced in equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.
We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and di
sordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits plateau structure at suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes can not be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with the recent experiment.
Quantum spin transport is studied in an interacting quantum dot. It is found that a conductance plateau emerges in the non-linear charge conductance by a spin bias in the Kondo regime. The conductance plateau, as a complementary to the Kondo peak, or
iginates from the strong electron correlation and exchange processes in the quantum dot, and can be regarded as one of the characteristics in quantum spin transport.
We study the influence of the phase relaxation process on Hall resistance and spin Hall current of a mesoscopic two-dimensional (2D) four-terminal Hall cross-bar with or without Rashba spin-orbit interaction (SOI) in a perpendicular uniform magnetic
field. We find that the plateaus of the Hall resistance with even number of edge states can survive for very strong phase relaxation when the system size becomes much longer than the phase coherence length. On the other hand, the odd integer Hall resistance plateaus arising from the SOI are easily destroyed by the weak phase relaxation during the competition between the magnetic field and the SOI which delocalize the edge states. In addition, we have also studied the transverse spin Hall current and found that it exhibits resonant behavior whenever the Fermi level crosses the Landau band of the system. The phase relaxation process weakens the resonant spin Hall current and enhances the non-resonant spin Hall current.
