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تسجيل مستخدم جديدDouble quantum dot as detector of spin bias
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It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the quantum dot. It is found that the spin polarization in the left and right dots may be induced spontaneously while the intra-dot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit an charge bias instead of a charge current will be induced in equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.
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A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (Q
Ds), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $sim 27%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80%$ and $-90%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $pm 80%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.
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level system with energy separation becoming exponentially small in the macroscopic (large N) limit. Decoherence at zero temperature is studied in the limit of weak coupling with phonons. In this case the macroscopic limit is robust with respect to decoherence. Some possible applications in quantum information processing are discussed.
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