The formation of domains comprising alternating hole rich and hole poor ladders recently observed by Scanning Tunneling Microscopy by Kohsaka et al., on lightly hole doped cuprates, is interpreted in terms of an attractive mechanism which favors the
presence of doped holes on Cu sites located each on one side of an oxygen atom. This mechanism leads to a geometrical pattern of alternating hole-rich and hole-poor ladders with a periodicity equal to 4 times the lattice spacing in the CuO plane, as observed experimentally. To cite this article: G. Deutscher, P.-G. de Gennes, C. R. Physique 8 (2007).
