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To optimise the design of the light readout in the ArDM 1-ton liquid argon dark matter detector, a range of reflector and WLS coating combinations were investigated in several small setups, where argon scintillation light was generated by radioactive sources in gas at normal temperature and pressure and shifted into the blue region by tetraphenyl butadiene (TPB). Various thicknesses of TPB were deposited by spraying and vacuum evaporation onto specular 3M{smalltexttrademark}-foil and diffuse Tetratex{smalltextregistered} (TTX) substrates. Light yields of each reflector and TPB coating combination were compared. Reflection coefficients of TPB coated reflectors were independently measured using a spectroradiometer in a wavelength range between 200 and 650 nm. WLS coating on the PMT window was also studied. These measurements were used to define the parameters of the light reflectors of the ArDM experiment. Fifteen large $120times 25$ cm$^2$ TTX sheets were coated and assembled in the detector. Measurements in argon gas are reported providing good evidence of fulfilling the light collection requirements of the experiment.
For the first time secondary scintillation, generated within the holes of a thick gas electron multiplier (TGEM) immersed in liquid argon, has been observed and measured using a silicon photomultiplier device (SiPM). 250 electron-ion pairs, generated in liquid argon via the interaction of a 5.9KeV Fe-55 gamma source, were drifted under the influence of a 2.5KV/cm field towards a 1.5mm thickness TGEM, the local field sufficiently high to generate secondary scintillation light within the liquid as the charge traversed the central region of the TGEM hole. The resulting VUV light was incident on an immersed SiPM device coated in the waveshifter tetraphenyl butadiene (TPB), the emission spectrum peaked at 460nm in the high quantum efficiency region of the device. For a SiPM over-voltage of 1V, a TGEM voltage of 9.91KV, and a drift field of 2.5KV/cm, a total of 62 photoelectrons were produced at the SiPM device per Fe-55 event, corresponding to an estimated gain of 150 photoelectrons per drifted electron.
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