A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur aw
ay from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and textit{ab initio} calculations reveal partial gapping of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $bar{Gamma}bar{K}$ closes to zero toward the mirror-invariant $bar{Gamma}bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.
We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd3As2, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, on
e of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signal corresponds to a decrease in absorption, and the slower signal to a decrease in the lights phase velocity, at the probe energy. We attribute these signals to electrons filling of phase space, first near the photon energy and later at lower energy. We attribute their decay to cooling by rapid emission of optical phonons, then slower emission of acoustic phonons. We also present evidence that both the electrons and the lattice are strongly heated.
Graphene is an attractive material for nanomechanical devices because it allows for exceptional properties, such as high frequencies and quality factors, and low mass. An outstanding challenge, however, has been to obtain large coupling between the m
otion and external systems for efficient readout and manipulation. Here, we report on a novel approach, in which we capacitively couple a high-Q graphene mechanical resonator ($Q sim 10^5$) to a superconducting microwave cavity. The initial devices exhibit a large single-photon coupling of $sim 10$ Hz. Remarkably, we can electrostatically change the graphene equilibrium position and thereby tune the single photon coupling, the mechanical resonance frequency and the sign and magnitude of the observed Duffing nonlinearity. The strong tunability opens up new possibilities, such as the tuning of the optomechanical coupling strength on a time scale faster than the inverse of the cavity linewidth. With realistic improvements, it should be possible to enter the regime of quantum optomechanics.
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors pu
t the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.
We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2E16 to 6E17 cm-3. After the first f
ew picoseconds the grating decays primarily due to ambipolar diffusion. While at low density we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, at high n it appears to saturate at 34 cm2/s. We present a simple calculation that reproduces the main results of our measurements as well as of previously published measurements that had shown diffusion to be a flat or decreasing function of n. By accounting for effect of density on charge susceptibility we show that, in p-type semiconductors, the regime we observe of increasing ambipolar diffusion is unique to heavy doping and low temperature, where both the holes and electrons are degenerate; in this regime the electronic and ambipolar diffusion are nearly equal. The saturation is identified as a crossover to ambipolar diffusion dominated by the majority carriers, the holes. At short times the transient-grating signal rises gradually. This rise reveals cooling of hot electrons and, at high photocarrier density, allows us to measure ambipolar diffusion of 110 cm2/s in the hot-carrier regime.
We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a life
time of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.
We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion coefficient
of 88 +/- 12 cm2/s is roughly constant at temperatures from 15 K to 150 K, and the spin diffusion length is at least 450 nm. We show that it is possible to use spin diffusion to estimate the electron diffusion coefficient. Due to electron-electron interactions, the electron diffusion is 1.4 times larger than the spin diffusion.
The Enriched Xenon Observatory (EXO) will search for double beta decays of 136Xe. We report the results of a systematic study of trace concentrations of radioactive impurities in a wide range of raw materials and finished parts considered for use in
the construction of EXO-200, the first stage of the EXO experimental program. Analysis techniques employed, and described here, include direct gamma counting, alpha counting, neutron activation analysis, and high-sensitivity mass spectrometry.
