We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well
reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the
implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.
