Modeling of plasma turbulence and transport in the Large Plasma Device

Numerical simulation of plasma turbulence in the Large Plasma Device (LAPD) [Gekelman et al, Rev. Sci. Inst., 62, 2875, 1991] is presented. The model, implemented in the BOUndary Turbulence (BOUT) code [M. Umansky et al, Contrib. Plasma Phys. 180, 887 (2009)], includes 3-D collisional fluid equations for plasma density, electron parallel momentum, and current continuity, and also includes the effects of ion-neutral collisions. In nonlinear simulations using measured LAPD density profiles but assuming constant temperature profile for simplicity, self-consistent evolution of instabilities and nonlinearly-generated zonal flows results in a saturated turbulent state. Comparisons of these simulations with measurements in LAPD plasmas reveal good qualitative and reasonable quantitative agreement, in particular in frequency spectrum, spatial correlation and amplitude probability distribution function of density fluctuations. For comparison with LAPD measurements, the plasma density profile in simulations is maintained either by direct azimuthal averaging on each time step, or by adding particle source/sink function. The inferred source/sink values are consistent with the estimated ionization source and parallel losses in LAPD. These simulations lay the groundwork for more a comprehensive effort to test fluid turbulence simulation against LAPD data.

Electron-phonon interaction and spectral weight transfer in Fe$_{1-x}$Co$_{x}$Si

A comprehensive ellipsometric study was performed on Fe$_{1-x}$Co$_{x}$Si single crystals in the spectral range from 0.01 eV to 6.2 eV. Direct and indirect band gaps of 73 meV and 10 meV, respectively, were observed in FeSi at 7 K. One of four infrared-active phonons that is energetically close to the direct absorption edge is coupled both to the electrons and to the low-energy phonon. This is evident from asymmetry in the phonon line shape and a reduction of its frequency when the absorption edge shifts across the phonon energy due to the temperature dependence of the direct band gap. As the temperature increases, the indirect gap changes sign, which manifests as a transition from a semiconductor to a semimetal. The corresponding gain of the spectral weight at low energies was recovered within an energy range of several eV. The present findings strongly support the model indicating that Fe$_{1-x}$Co$_{x}$Si can be well described in an itinerant picture, taking into account self-energy corrections.