Improved He I Emissivities in the Case B Approximation

We update our prior work on the case B collisional-recombination spectrum of He I to incorporate textit{ab initio} photoionisation cross-sections. This large set of accurate, self-consistent cross-sections represents a significant improvement in He I emissivity calculations because it largely obviates the piecemeal nature that has marked all modern works. A second, more recent set of textit{ab initio} cross-sections is also available, but we show that those are less consistent with bound-bound transition probabilities than our adopted set. We compare our new effective recombination coefficients with our prior work and our new emissivities with those by other researchers, and we conclude with brief remarks on the effects of the present work on the He I error budget. Our calculations cover temperatures $5000 le T_e le 25000$ K and densities $10^1 le n_e le 10^{14}$ cm$^{-3}$. Full results are available online.

New effective recombination coefficients for nebular N II lines

Here we report new ${it ab initio}$ calculations of the effective recombination coefficients for the ion{N}{ii} recombination spectrum. We have taken into account the density dependence of the coefficients arising from the relative populations of the fine-structure levels of the ground state of the recombining ion, an elaboration that has not been attempted before for this ion, and it opens up the possibility of electron density determination via recombination line analysis. Photoionization cross-sections, bound state energies, and the oscillator strengths of ion{N}{ii} with $n leq 11$ and $l leq 4$ have been obtained using the close-coupling R-matrix method in the intermediate coupling scheme. Photoionization data were computed that accurately map out the near-threshold resonances and were used to derive recombination coefficients, including radiative and dielectronic recombination. Also new is including the effects of dielectronic recombination via high-$n$ resonances lying between the $^2$P$^{rm o}$,$_{1/2}$ and $^2$P$^{rm o}$,$_{3/2}$ levels. The new calculations are valid for temperatures down to an unprecedentedly low level (approximately 100 K). The newly calculated effective recombination coefficients allow us to construct plasma diagnostics based on the measured strengths of the ion{N}{ii} optical recombination lines (ORLs). The derived effective recombination coefficients are fitted with analytic formulae as a function of electron temperature for different electron densities. The dependence of the emissivities of the strongest transitions of ion{N}{ii} on electron density and temperature is illustrated. Potential applications of the current data to electron density and temperature diagnostics for photoionized gaseous nebulae are discussed. We also present a method of determining electron temperature and density simultaneously.

Electron impact excitation of OII fine-structure levels

Effective collision strengths for forbidden transitions among the 5 energetically lowest finestructure levels of O II are calculated in the Breit-Pauli approximation using the R-matrix method. Results are presented for the electron temperature range 100 to 100 000 K. The accuracy of the calculations is evaluated via the use of different types of radial orbital sets and a different configuration expansion basis for the target wavefunctions. A detailed assessment of previous available data is given, and erroneous results are highlighted. Our results reconfirm the validity of the original Seaton and Osterbrock scaling for the optical O II ratio, a matter of some recent controversy. Finally we present plasma diagnostic diagrams using the best collision strengths and transition probabilities.