Two magnetic ordering transitions are found in InMnO3, the paramagnetic to antiferromagnetic transition near ~118 K and a lower possible spin rotation transition near ~42 K. Multiple length scale structural measurements reveal enhanced local distorti
on found to be connected with tilting of the MnO5 polyhedra as temperature is reduced. Strong coupling is observed between the lattice and the spin manifested as changes in the structure near both of the magnetic ordering temperatures (at ~42 K and ~ 118 K). External parameters such as pressure are expected to modify the coupling.
Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understand
ing the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr) are indispensable along all crystal directions. On the other hand, the development of superconducting devices such as tunnel junctions requires multilayered heterostructures. Here we show that artificially engineered undoped Ba-122 / Co doped Ba-122 compositionally modulated superlattices produce ab-aligned nanoparticle arrays. These layer and self-assemble along c-axis aligned defects, and combine to produce very large Jc and Hirr enhancements over a wide angular range. We also demonstrate a structurally modulated SrTiO3 (STO) / Co doped Ba-122 superlattice with sharp interfaces. Success in superlattice fabrication involving pnictides will aid the progress of heterostructured systems exhibiting novel interfacial phenomena and device applications.
Single crystal synthesis, structure, electric polarization and heat capacity measurements on hexagonal InMnO3 show that this small R ion in the RMnO3 series is ferroelectric (space group P63cm). Structural analysis of this system reveals a high degre
e of order within the MnO5 polyhedra but significant distortions in the R-O bond distributions compared to the previously studied materials. Point-charge estimates of the electric polarization yield an electrical polarization of approximately 7.8 micro C/cm^2, 26% larger than the well-studied YMnO3 system. This system with enhanced room temperature polarization values may serve as a possible replacement for YMnO3 in device application.
We observe the appearance of a phonon near the lock-in temperature in orthorhombic REMnO3 (RE: Lu and Ho) and anomalous phonon hardening in orthorhombic LuMnO3. The anomalous phonon occurs at the onset of spontaneous polarization. No such changes wer
e found in incommensurate orthorhombic DyMnO3. These observations directly reveal different electric polarization mechanisms in the E-type and IC-type REMnO3.
Synchrotron infrared measurements were conducted over the range 100 to 8000 cm-1 on a self-doped LaxMnO3-d (x~~0.8) film. From these measurements we determined the conductivity, the effective number of free carriers, and the specific phonon modes as
a function of frequency. While the metal-insulator transition temperature (TMI) and the magnetic ordering temperature (TC) approximately coincide, the free carrier density onset occurs at a significantly lower temperature (~~45 K below). This suggests that local distortions exist below TMI and TC which trap the eg conduction electrons. These regions with local distortions constitute an insulating phase which persists for temperatures significantly below TMI and TC. The initial large drop in resistivity is due to the enhanced magnetic ordering while further drops correspond to reductions in the insulating phase which increase the number of free carriers.
