Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal

The thermoelectric properties of n type nanoscale three dimensional (3D) Si phononic crystals (PnCs) with spherical pores are studied. Density functional theory and Boltzmann transport equation under the relaxation time approximation are applied to study the electronic transport coefficients, electrical conductivity, Seebeck coefficient and electronic thermal conductivity. We found that the electronic transport coefficients in 3D Si PnC at room temperature (300 K) change very little compared with that of Si, for example, electrical conductivity and electronic thermal conductivity is decreased by 0.26 to 0.41 and 0.39 to 0.55 depending on carrier concentration, respectively, and the Seebeck coefficient is similar to that of bulk Si. However, the lattice thermal conductivity of 3D Si PnCs with spherical pores is decreased by a factor of 500 calculated by molecular dynamics methods, leading to the ZT of 0.76, which is about 30 times of that of porous Si. This work indicates that 3D Si PnC is a promising candidate for high efficiency thermoelectric materials.

Significant Reduction of Graphene Thermal Conductivity by Phononic Crystal Structure

We studied the thermal conductivity of graphene phononic crystal (GPnC), also named as graphene nanomesh, by molecular dynamics simulations. The dependences of thermal conductivity of GPnCs on both length and temperature are investigated. It is found that the thermal conductivity of GPnCs is significantly lower than that of graphene and can be efficiently tuned by changing the porosity and period length. For example, the ratio of thermal conductivity of GPnC to thermal conductivity of graphene can be changed from 0.1 to 0.01 when the porosity is changed from about 21% to 65%. The phonon participation ratio spectra reveal that more phonon modes are localized in GPnCs with larger porosity. Our results suggest that creating GPnCs is a valuable method to efficiently manipulate the thermal conductivity of graphene.

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires

The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28Si NW, when doped with fifty percent isotope atoms. The thermal conductivity of isotopic-superlattice structured SiNWs depends clearly on the period of superlattice. At a critical period of 1.09 nm, the thermal conductivity is only 25% of the value of pure Si NW. An anomalous enhancement of thermal conductivity is observed when the superlattice period is smaller than this critical length. The ultra-low thermal conductivity of superlattice structured SiNWs is explained with phonon spectrum theory.

Thermal rectification and negative differential thermal resistance in lattices with mass gradient

We study thermal properties of one dimensional(1D) harmonic and anharmonic lattices with mass gradient. It is found that the temperature gradient can be built up in the 1D harmonic lattice with mass gradient due to the existence of gradons. The heat flow is asymmetric in the anharmonic lattices with mass gradient. Moreover, in a certain temperature region the {it negative differential thermal resistance} is observed. Possible applications in constructing thermal rectifier and thermal transistor by using the graded material are discussed.