The magnetic, transport, and thermal properties of single crystals of the series Fe(Ga1-xGex)3 are reported. Pure FeGa3 is a nonmagnetic semiconductor, that when doped with small concentrations of Ge (extrinsic electrons), passes through an insulator
-to-metal transition and displays non-Fermi liquid (NFL) behavior. Moreover, we observer clear signatures of a ferromagnetic quantum critical point (FM-QCP) in this system at x = 0.052. The mechanism of the local moment formation is consistent with a one-electron reduction of Fe dimer singlets, a unique structural feature in FeGa3, where the density of these mixed valence (Fe(III)-Fe(II)) dimers provides a unique tuning parameter of quantum criticality.
The superconducting and critical current properties of thin films of NiBi3 formed on the surface of carbon microfibers and sapphire substrates are reported. The NiBi3 coated carbon microfibers were prepared by reacting 7 {mu}m diameter Ni-coated (~ 8
0 nm) carbon fibers with Bi vapor, and thin films on sapphire were formed by exposing electron-beam deposited Ni films (~ 40 - 120 nm) to Bi vapor. The microfibers and films show Tc = 4.3 K and 4.4 K,respectively, which were slightly higher than that reported for bulk polycrystalline NiBi3. The critical current density (Jc) was measured below the transition temperature and is well described by the Ginzburg-Landau power-law.
Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 {mu}V/K), but the thermoelec
tric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity ({kappa}(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 {mu}V/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n
-type Seebeck coefficient (S ~ -400 mu V/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (~ -150 mu V/K). The largest power factor (S2/{rho} = 62 mu W/m K2) and corresponding figure of merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
