The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C subst
itution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample . In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.
Thermoelectric power, S(T) of the Mg1-xAlxB2 system has been measured for x = 0.0, 0.1, 0.2, 0.4, 0.6, 0.8 and 1.0. XRD, resistivity and magnetization measurements are also presented. It has been found that the thermoelectric power is positive for x
= 0.4 and is negative for x = 0.6 over the entire temperature range studied up to 300 K. The thermoelectric power of x = 0.4 samples vanishes discontinuously below a certain temperature, implying existence of superconductivity. In general, the magnitude of the thermoelectric power increases with temperature up to a certain temperature, and then it starts to decrease towards zero base line. In order to explain the observed behavior of the thermoelectric power, we have used a model in which both diffusion and phonon drag processes are combined by using a phenomenological interpolation between the low and high temperature behaviors of the thermoelectric power. The considered model provides an excellent fit to the observed data. It is further found that Al doping enhances the Debye temperature.
The physical property characterization of Al doped Mg1-xAlxB2 system with x = 0.0 to 0.50 is reported. The results related to phase formation, structural transition, resistivity R(T) and magnetization M(T) measurements are discussed in detail. It is
shown that the addition of electrons to MgB2 through Al results in loss of superconductivity. Also seen is a structural transition associated with the collapse of boron layers reflected by the continuous decrease in the c parameter. The main emphasis in this paper is on slow scan X-ray diffraction (XRD) results, which confirm the existence of a superstructure along the c-direction for the x = 0.50 sample. The appearance of some additional peaks, viz. [103], [004], [104] and [112], results in doubling of the lattice parameter along the c-axis. This possibly indicates the alternative ordering of Al and Mg in MgAlB4 separated by hexagonal boron layers but still maintaining the same hexagonal AlB2 type structure.
We report synthesis, structure/micro-structure, resistivity under magnetic field [R(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity K(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB2,
processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3-4nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB2. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm-1. Superconductivity is observed at 37.2K by magnetic susceptibility C(T), resistivity R(T), thermoelectric power S(T), and thermal conductivity K(T) measurements. The power law fitting of R(T) give rise to Debye temperature at 1400K which is found consistent with the theoretical fitting of S(T), exhibiting ThetaD of 1410K and carrier density of 3.81x 1028/m3. Thermal conductivity K(T) shows a jump at 38K, i.e., at Tc, which was missing in some earlier reports. Critical current density (Jc) of up to 105 A/cm2 in 1-2T (Tesla) fields at temperatures (T) of up to 10K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20K respectively. The superconducting performance parameters viz. irreversibility field (Hirr) and critical current density Jc(H) of the studied MgB2 are improved profoundly with addition of nano-SiC and nano-Diamond. The physical property parameters measured for polycrystalline MgB2 are compared with earlier reports and a consolidated insight of various physical properties is presented.
The high field magnetization and magneto transport measurements are carried out to determine the critical superconducting parameters of MgB2-xCx system. The synthesized samples are pure phase and the lattice parameters evaluation is carried out using
the Rietveld refinement. The R-T(H) measurements are done up to a field of 140 kOe. The upper critical field values, Hc2 are obtained from this data based upon the criterion of 90% of normal resistivity i.e. Hc2=H at which Rho=90%Rho; where RhoN is the normal resistivity i.e., resistivity at about 40 K in our case. The Werthamer-Helfand-Hohenberg (WHH) prediction of Hc(0) underestimates the critical field value even below than the field up to which measurement is carried out. After this the model, the Ginzburg Landau theory (GL equation) is applied to the R-T(H) data which not only calculates the Hc2(0) value but also determines the dependence of Hc2 on temperature in the low temperature high field region. The estimated Hc(0)=157.2 kOe for pure MgB2 is profoundly enhanced to 297.5 kOe for the x=0.15 sample in MgB2-xCx series. Magnetization measurements are done up to 120 kOe at different temperatures and the other parameters like irreversibility field, Hirr and critical current density Jc(H) are also calculated. The nano carbon doping results in substantial enhancement of critical parameters like Hc2, Hirr and Jc(H) in comparison to the pure MgB2 sample.
The superconductivity of MgB2, AlB2, NbB2+x and TaB2+x is inter-compared. The stretched c-lattice parameter (c = 3.52 A) of MgB2 in comparison to NbB2.4 (c = 3.32 A) and AlB2 (c = 3.25 A) decides empirically the population of their p and s bands and
as a result their transition temperature, Tc values respectively at 39K and 9.5K for the first two and no superconductivity for the later. Besides the electron doping from substitution of Mg+2 by Al+3, the stretched c-parameter also affects the Boron plane constructed hole type Sigma-band population and the contribution from Mg or Al plane electron type Pi band. This turns the electron type (mainly Pi-band conduction) non-superconducting AlB2 to hole type (mainly s-band conduction) MgB2 superconductor (39 K) as indicated by the thermoelectric power study. Keeping this strategy in mind that stretching of c-parameter enhances superconductivity, the NbB2+x and TaB2+x samples are studied for existence of superconductivity. The non-stoichiometry induces an increase in c parameter with Boron excess in both borides. Magnetization (M-T) and Resistivity measurements (R-T) in case of niobium boride samples show the absence of superconductivity in stoichiometric NbB2 sample (c = 3.26 A) while a clear diamagnetic signal and a R = 0 transition for Boron excess NbB2+x samples. On the other hand, superconductivity is not achieved in TaB2+x case. The probable reason behind is the comparatively lesser or insufficient stretching of c-parameter.
We report the synthesis, magnetic susceptibility and crystal structure analysis for NbB2+x (x = 0.0 to 1.0) samples. The study facilitates in finding a correlation among the lattice parameters, chemical composition and the superconducting transition
temperature Tc. Rietveld analysis is done on the X- ray diffraction patterns of all synthesized samples to determine the lattice parameters. The a parameter decreases slightly and has a random variation with increasing x, while c parameter increases from 3.26 for pure NbB2 to 3.32 for x=0.4 i.e. NbB2.4. With higher Boron content (x>0.4) the c parameter decreases slightly. The stretching of lattice in c direction induces superconductivity in the non- stoichiometric niobium boride. Pure NbB2 is non-superconductor while the other NbB2+x (x>0.0) samples show diamagnetic signal in the temperature range 8.9-11K. Magnetization measurements (M-H) at a fixed temperature of 5K are also carried out in both increasing and decreasing directions of field. The estimated lower and upper critical fields (Hc1 & Hc2) as viewed from M-H plots are around 590 and 2000Oe respectively for NbB2.6 samples. In our case, superconductivity is achieved in NbB2 by varying the Nb/B ratios, rather than changing the processing conditions as reported by others.
We report an easy and versatile one-step route of synthesis for newly discovered Fe based superconductor LaFeAsO1-d with d = 0.0 to 0.15. Instead of widely used high-pressure-high-temperature (HPHT) synthesis, we applied the normal atmosphere solid-s
tate reaction route. The stoichiometric mixtures of Fe, La2O3, La and As in ratio LaFeAsO1-d with d = 0.0 to 0.15 are sealed in an evacuated quartz tube and further heated at 500, 850 and 1100 0C in Ar for 12, 12 and 33 hours respectively in a single step. The resulting compounds are single phase LaFeAsO crystallized in tetragonal P4/nmm structure. These samples showed the ground state spin density wave (SDW) like metallic behavior below around 150 K. In conclusion the ground state of newly discovered Fe based superconductor is synthesized via an easy one-step solid-state reaction route.
We report the synthesis and variation of superconductivity parameters such as transition temperature Tc, upper critical field Hc, critical current density Jc, irreversibility field Hirr and flux pinning parameter (Fp) for the MgB2-xCx system with nan
o-Carbon doping up to x=0.20. Carbon substitutes successfully on boron site and results in significant enhancement of Hirr and Jc(H). Resistivity measurements reveal a continuous decrease in Tc under zero applied field, while the same improves remarkably at higher fields with an increase in nano-C content for MgB2-xCx system. The irreversibility field value (Hirr) is 7.6 & 6.6 Tesla at 5 and 10K respectively for the pristine sample, which is enhanced to 13.4 and 11.0 Tesla for x = .08 sample at same temperatures. Compared to undoped sample, critical current density (Jc) for the x=0.08 nano-Carbon doped sample is increased by a factor of 24 at 10K at 6 Tesla field.
