Imprint of charge and oxygen orders on Dy ions in DyBa$_2$Cu$_3$O$_{6+x}$ thin films probed by resonant x-ray scattering

We used resonant elastic x-ray scattering at the Cu $L_3$ and Dy $M_5$ edges to investigate charge order in thin films of underdoped DyBa$_2$Cu$_3$O$_{6+x}$ (DyBCO) epitaxially grown on NdGaO$_3$ (110) substrates. The films show an orthorhombic crystal structure with short-range ortho-II oxygen order in the charge-reservoir layers. At the Dy $M_5$ edge we observe diffraction peaks with the same planar wavevectors as those of the two-dimensional charge density wave in the CuO$_2$ planes and of the ortho-II oxygen order, indicating the formation of induced ordered states on the rare-earth sublattice. The intensity of the resonant diffraction peaks exhibits a non-monotonic dependence on an external magnetic field. Model calculations on the modulation of the crystalline electric field at the Dy sites by charge and oxygen order capture the salient features of the magnetic field, temperature, and photon energy dependence of the scattering intensity.

Tunable perpendicular exchange bias in oxide heterostructures

The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has proven remarkably difficult to realize perpendicular exchange bias in thin-film structures. Here we demonstrate a strong perpendicular exchange bias effect in heterostructures of the quasi-two-dimensional canted antiferromagnet La$_2$CuO$_4$ and ferromagnetic (La,Sr)MnO$_3$ synthesized by ozone-assisted molecular beam epitaxy. The magnitude of this effect can be controlled via the doping level of the cuprate layers. Canted antiferromagnetism of layered oxides is thus a new and potentially powerful source of uniaxial anisotropy in magnetic devices.

Control of dopant crystallinity in electrochemically treated cuprate thin films

We present a methodology based on textit{ex-situ} (post-growth) electrochemistry to control the oxygen concentration in thin films of the superconducting oxide La$_2$CuO$_{4+y}$ grown epitaxially on substrates of isostructural LaSrAlO$_4$. The superconducting transition temperature, which depends on the oxygen concentration, can be tuned by adjusting the pH level of the base solution used for the electrochemical reaction. As our main finding, we demonstrate that the dopant oxygens can either occupy the interstitial layer in an orientationally disordered state or organize into a crystalline phase via a mechanism in which dopant oxygens are inserted into the substrate, changing the lattice symmetry of both the substrate and the epitaxial film. We discuss this mechanism, and describe the resulting methodology as a platform to be explored in thin films of other transition metal oxides.