Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thickne
sses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wall surface energy was obtained by analyzing the spatial period of the s
tripe domains and fitting established domain models to the period. In combination with SQUID measurements of magnetization and anisotropy energy, this leads to an estimate of the exchange stiffness and domain wall width in these films. These parameters are essential for determining whether domain walls will form in patterned structures and devices made of such materials.
