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Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found
We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The resistance-area product
Thin electrodes of magnetic tunnel junctions can show superparamagnetism at surprisingly low temperature. We analysed their thermally induced switching for varying temperature, magnetic and electric field. Although the dwell times follow an Arrhenius
We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio o
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO base