We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different ma
nufacturers have been irradiated integrating up to 7x10^10 1-MeV-equivalent neutrons per cm^2. Detector performances have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated fluence of the order of 10^8 1-MeV-equivalent neutrons per cm^2.
