Magnetite thin fims have been grown epitaxially on ZnO and MgO substrates using molecular beam epitaxy. The film quality was found to be strongly dependent on the oxygen partial pressure during growth. Structural, electronic, and magnetic properties
were analyzed utilizing Low Energy Electron Diffraction (LEED), HArd X-ray PhotoElectron Spectroscopy (HAXPES), Magneto Optical Kerr Effect (MOKE), and X-ray Magnetic Circular Dichroism (XMCD). Diffraction patterns show clear indication for growth in the (111) direction on ZnO. Vertical structure analysis by HAXPES depth profiling revealed uniform magnetite thin films on both type of substrates. Both, MOKE and XMCD measurements show in-plane easy magnetization with a reduced magnetic moment in case of the films on ZnO.
Magnetite (Fe3O4) thin films on GaAs have been studied with HArd X-ray PhotoElectron Spectroscopy (HAXPES) and low-energy electron diffraction. Films prepared under different growth conditions are compared with respect to stoichiometry, oxidation, an
d chemical nature. Employing the considerably enhanced probing depth of HAXPES as compared to conventional x-ray photoelectron spectroscopy (XPS) allows us to investigate the chemical state of the film-substrate interfaces. The degree of oxidation and intermixing at the interface are dependent on the applied growth conditions; in particular, we found that metallic Fe, As2O3, and Ga2O3 exist at the interface. These interface phases might be detrimental for spin injection from magnetite into GaAs.
