We report thermal-expansion, lattice-constant, and specific-heat data of the series La_1-xA_xCoO_3 for 0<= x <= 0.30 with A = Ca, Sr, and Ba. For the undoped compound LaCoO_3 the thermal-expansion coefficient alpha(T) exhibits a pronounced maximum ar
ound T=50K caused by a temperature-driven spin-state transition from a low-spin state of the Co^{3+$ ions at low towards a higher spin state at higher temperatures. The partial substitution of the La^{3+} ions by divalent Ca^{2+}, Sr^{2+}, or Ba^{2+} ions causes drastic changes in the macroscopic properties of LaCoO3. The large maximum in alpha(T) is suppressed and completely vanishes for x> 0.12. For A = Ca three different anomalies develop in alpha(T) with further increasing x, which are visible in specific-heat data as well. Together with temperature-dependent x-ray data we identify several phase transitions as a function of the doping concentration x and temperature. From these data we propose an extended phase diagram for La_1-xCa_xCoO_3.
The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase
from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.
In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic silicon (Si:
B) and recently in the stochiometric mixture of heavily boron-doped silicon carbide (SiC:B). The latter system surprisingly exhibits type-I superconductivity in contrast to the type-II superconductors C:B and Si:B. Here we will focus on the specific heat of two different superconducting samples of boron-doped SiC. One of them contains cubic and hexagonal SiC whereas the other consists mainly of hexagonal SiC without any detectable cubic phase fraction. The electronic specific heat in the superconducting state of both samples SiC:B can be described by either assuming a BCS-type exponentional temperature dependence or a power-law behavior.
The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered sup
erconductivity in the closely related mixed system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type-II. In this paper we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to non-superconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two parent materials C:B and Si:B.
