Novel substrates for Helium adsorption: Graphane and Graphene-Fluoride

The discovery of fullerenes has stimulated extensive exploration of the resulting behavior of adsorbed films. Our study addresses the planar substrates graphene-fluoride (GF) and graphane (GH) in comparison to graphene. We present initial results concerning the potential energy, energy bands and low density behavior of 4He and 3He films on such different surfaces. For example, while graphene presents an adsorption potential that is qualitatively similar to that on graphite, GF and GH yield potentials with different symmetry, a number of adsorption sites double that on graphene/graphite and a larger corrugation for the adatom. In the case of GF, the lowest energy band width is similar to that on graphite but the He atom has a significantly larger effective mass and the adsorption energy is about three time that on graphite. Implications concerning the monolayer phase diagram of 4He are explored with the exact path integral ground state method. A commensurate ordered state similar to the sqrt{3} x sqrt{3} R30^o state on graphite is found the be unstable both on GF and on GH. The ground states of submonolayer 4He on both GF and GH are superfluids with a Bose Einstein condensate fraction of about 10%.

Study of solid 4He in two dimensions. The issue of zero-point defects and study of confined crystal

Defects are believed to play a fundamental role in the supersolid state of 4He. We report on studies by exact Quantum Monte Carlo (QMC) simulations at zero temperature of the properties of solid 4He in presence of many vacancies, up to 30 in two dimensions (2D). In all studied cases the crystalline order is stable at least as long as the concentration of vacancies is below 2.5%. In the 2D system for a small number, n_v, of vacancies such defects can be identified in the crystalline lattice and are strongly correlated with an attractive interaction. On the contrary when n_v~10 vacancies in the relaxed system disappear and in their place one finds dislocations and a revival of the Bose-Einstein condensation. Thus, should zero-point motion defects be present in solid 4He, such defects would be dislocations and not vacancies, at least in 2D. In order to avoid using periodic boundary conditions we have studied the exact ground state of solid 4He confined in a circular region by an external potential. We find that defects tend to be localized in an interfacial region of width of about 15 A. Our computation allows to put as upper bound limit to zero--point defects the concentration 0.003 in the 2D system close to melting density.