Evidence is presented for the finite wave vector crossing of the two lowest one-dimensional spin-split subbands in quantum point contacts fabricated from two-dimensional hole gases with strong spin-orbit interaction. This phenomenon offers an elegant
explanation for the anomalous sign of the spin polarization filtered by a point contact, as observed in magnetic focusing experiments. Anticrossing is introduced by a magnetic field parallel to the channel or an asymmetric potential transverse to it. Controlling the magnitude of the spin-splitting affords a novel mechanism for inverting the sign of the spin polarization.
We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley spli
tting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses <6 nm valley splitting is found to be >150 ueV. Using the unique advantage of atomistic calculations we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5, the splitting fluctuates with ~20 ueV for different disorder realizations. Through these simulations we can guide future experiments into regions of low device-to-device fluctuations.
We investigate effects of lateral confinement on spin splitting of energy levels in 2D hole gases grown on [311] GaAs. We found that lateral confinement enhances anisotropy of spin splitting relative to the 2D gas for both confining directions. Unexp
ectedly, the effective $g$-factor does not depend on the 1D energy level number $N$ for $B|[0bar{1}1]$ while it has strong $N$-dependence for $B|[bar{2}33]$. Apart from quantitative difference in the spin splitting of energy levels for the two orthogonal confinement directions we also report qualitative differences in the appearance of spin-split plateaus, with non-quantized plateaus observed only for the confinement in $[0bar{1}1]$ direction. In our samples we can clearly associate the difference with anisotropy of spin-orbit interactions.
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnet
ization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we report a novel non-volatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization p
rovides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material.
