Vanadium sesquioxide V2O3 is considered a textbook example of Mott-Hubbard physics. In this paper we present an extended optical study of its whole temperature/doping phase diagram as obtained by doping the pure material with M=Cr or Ti atoms (V1-xMx
)2O3. We reveal that its thermodynamically stable metallic and insulating phases, although macroscopically equivalent, show very different low-energy electrodynamics. The Cr and Ti doping drastically change both the antiferromagnetic gap and the paramagnetic metallic properties. A slight chromium content induces a mesoscopic electronic phase separation, while the pure compound is characterized by short-lived quasiparticles at high temperature. This study thus provides a new comprehensive scenario of the Mott-Hubbard physics in the prototype compound V2O3.
The lattice dynamics of Ba$_2$CuGe$_2$O$_7$, a compound which develops Dzyaloshinsky-Moriya (DM) helical magnetism below $T_N$ = 3.2 K, has been studied by measuring the infrared reflectivity of a single crystal with the radiation polarized both in t
he $ab$ plane and along the $c$ axis of its tetragonal cell, from 7 K to 300 K. In this compound, where the unit cell has no inversion symmetry, fourteen $E$ phonon modes of the $ab$ plane, out of the eighteen predicted, and all the ten $B_2$ modes of the $c$ axis, have been observed. They have been assigned to the atomic motions by a comparison with shell-model calculations, which provided vibrational frequencies in good agreement with the experiment, while most calculated intensities turned to be much lower than the experimental values. This discrepancy has been tentatively explained by assuming strong electron-phonon interactions, a hypothesis supported by the failure of the $f$- sum rule if restricted to the phonon region. Indeed, we observe a remarkable increase in the oscillator strengths at $T$s low but higher than $T_N$, which suggests that the dielectric constant of Ba$_2$CuGe$_2$O$_7$ may increase at those temperatures.
We report pressure-dependent reflection and transmission measurements on ZnCr$_2$Se$_4$, HgCr$_2$S$_4$, and CdCr$_2$O$_4$ single crystals at room temperature over a broad spectral range 200-24000 cm$^{-1}$. The pressure dependence of the phonon modes
and the high-frequency electronic excitations indicates that all three compounds undergo a pressure-induced structural phase transition with the critical pressure 15 GPa, 12 GPa, and 10 GPa for CdCr$_2$O$_4$, HgCr$_2$S$_4$, and ZnCr$_2$Se$_4$, respectively. The eigenfrequencies of the electronic transitions are very close to the expected values for chromium crystal-field transitions. In the case of the chalcogenides pressure induces a red shift of the electronic excitation which indicates a strong hybridization of the Cr d-bands with the chalcogenide bands.
We report on an infrared study on the undoped compound BaFe2As2 as a function of both pressure (up to about 10 GPa) at three temperatures (300, 160, and 110 K). The evolution with pressure and temperature of the optical conductivity shows that, by in
creasing pressure, the mid-infrared absorptions associated with magnetic order are lowered while the Drude term increases, indicating the evolution towards a conventional metallic state. We evaluate the spectral weight dependence on pressure comparing it to that previously found upon doping. The whole optical results indicate that lattice modifications can not be recognized as the only parameter determining the low-energy electrodynamics in these compounds.
We investigated the electronic and vibrational properties of magnetite at temperatures from 300 K down to 10 K and for pressures up to 10 GPa by far-infrared reflectivity measurements. The Verwey transition is manifested by a drastic decrease of the
overall reflectance and the splitting of the phonon modes as well as the activation of additional phonon modes. In the whole studied pressure range the down-shift of the overall reflectance spectrum saturates and the maximum number of phonon modes is reached at a critical temperature, which sets a lower bound for the Verwey transition temperature T$_{mathrm{v}}$. Based on these optical results a pressure-temperature phase diagram for magnetite is proposed.
The optical properties of magnetite at room temperature were studied by infrared reflectivity measurements as a function of pressure up to 8 GPa. The optical conductivity spectrum consists of a Drude term, two sharp phonon modes, a far-infrared band
at around 600 cm$^{-1}$, and a pronounced mid-infrared absorption band. With increasing pressure both absorption bands shift to lower frequencies and the phonon modes harden in a linear fashion. Based on the shape of the MIR band, the temperature dependence of the dc transport data, and the occurrence of the far-infrared band in the optical conductivity spectrum the polaronic coupling strength in magnetite at room temperature should be classified as intermediate. For the lower-energy phonon mode an abrupt increase of the linear pressure coefficient occurs at around 6 GPa, which could be attributed to minor alterations of the charge distribution among the different Fe sites.
We address the in-plane pressure-dependent electrodynamics of graphite through synchrotron based infrared spectroscopy and ab initio Density Functional Theory calculations. The Drude term remarkably increases upon pressure application, as a consequen
ce of an enhancement of both electron and hole charge densities. This is due to the growth of the band dispersion along the k_z direction between the K and H points of the Brillouin zone. On the other hand, the mid-infrared optical conductivity between 800 and 5000 cm-1 is almost flat, and very weakly pressure dependent, at least up to 7 GPa. This demonstrates a surprising robustness of the graphene-like universal quantum conductance of graphite, even when the interlayer distance is significantly reduced.
We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n leq 3, driven by the softening of a polaronic mid-infrared band. A
t n = 5 that softening is incomplete, while at the largest-period n=8 compound the MIR band is independent of T and the SL remains insulating. One can thus first observe the IMT in a manganite system in the absence of the disorder due to chemical doping. Unsuccessful reconstruction of the SL optical properties from those of the original bulk materials suggests that (SrMnO3)n/(LaMnO3)2n heterostructures give rise to a novel electronic state.
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic i
nsulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.
We present reflectance measurements in the infrared region on a single crystal the rare earth scandate DyScO3. Measurements performed between room temperature and 10 K allow to determine the frequency of the infrared-active phonons, never investigate
d experimentally, and to get information on their temperature dependence. A comparison with the phonon peak frequency resulting from ab-initio computations is also provided. We finally report detailed data on the frequency dependence of the complex refractive index of DyScO3 in the terahertz region, which is important in the analysis of terahertz measurements on thin films deposited on DyScO3.
