We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes
of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitter
s having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.
We propose and experimentally demonstrate a photonic crystal nanocavity with multiple resonances that can be tuned nearly independently. The design is composed of two orthogonal intersecting nanobeam cavities. Experimentally, we measure cavity qualit
y factors of 6,600 and 1000 for resonances separated by 382 nm; we measure a maximum separation between resonances of 506 nm. These structures are promising for enhancing efficiency in nonlinear optical processes such as sum/difference frequency and stimulated Raman scattering.
We demonstrate a quantum dot single photon source at 900 nm triggered at 300 MHz by a continuous wave telecommunications wavelength laser followed by an electro-optic modulator. The quantum dot is excited by on-chip-generated second harmonic radiatio
n, resonantly enhanced by a GaAs photonic crystal cavity surrounding the InAs quantum dot. Our result suggests a path toward the realization of telecommunications-wavelength-compatible quantum dot single photon sources with speeds exceeding 1 GHz.
We describe and experimentally demonstrate a technique for deterministic coupling between a photonic crystal (PC) nanocavity and single emitters. The technique is based on in-situ scanning of a PC cavity over a sample and allows the positioning of th
e cavity over a desired emitter with nanoscale resolution. The power of the technique, which we term a Scanning Cavity Microscope (SCM), is demonstrated by coupling the PC nanocavity to a single nitrogen vacancy (NV) center in diamond, an emitter system that provides optically accessible electron and nuclear spin qubits.
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion effi
ciency $P_{rm out}/P_{rm in, coupled}^2 = 430%/{rm W}$. The large electronic band gap of GaP minimizes absorption loss, allowing efficient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.
Photonic crystal nanocavities at visible wavelengths are fabricated in a high refractive index (n>3.2) gallium phosphide membrane. The cavities are probed via a cross-polarized reflectivity measurement and show resonances at wavelengths as low as 645
nm at room temperature, with quality factors between 500 and 1700 for modes with volumes 0.7(lambda/n)^3. These structures could be employed for submicron scale optoelectronic devices in the visible, and for coupling to novel emitters with resonances in the visible such as nitrogen vacancy centers, and bio- and organic molecules.
