The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifet
imes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The observed energy transfer- rate is in agreement with a 1/d^4 dependence that is characteristic of 2D lossy media. The emitter decay rate is enhanced 90 times (transfer efficiency of ~99%) with respect to the decay in vacuum at distances d ~ 5 nm. This high energy-transfer rate is mainly due to the two-dimensionality and gapless character of the monoatomic carbon layer. Graphene is thus shown to be an extraordinary energy sink, holding great potential for photodetection, energy harvesting, and nanophotonics.
The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be greatly enhance
d when photoexcited carriers do not lose energy as heat, but instead transfer their excess energy into the production of additional electron-hole pairs via carrier-carrier scattering processes. Here we use Optical pump - Terahertz probe measurements to show that in graphene carrier-carrier scattering is unprecedentedly efficient and dominates the ultrafast energy relaxation of photoexcited carriers, prevailing over optical phonon emission in a wide range of photon wavelengths. Our results indicate that this leads to the production of secondary hot electrons, originating from the conduction band. Since hot electrons in graphene can drive currents, multiple hot carrier generation makes graphene a promising material for highly efficient broadband extraction of light energy into electronic degrees of freedom, enabling high-efficiency optoelectronic applications.
