Systematic P-NMR studies on LaFe(As_{1-x}P_x)(O_{1-y}F_y) with y=0.05 and 0.1 have revealed that the antiferromagnetic spin fluctuations (AFMSFs) at low energies are markedly enhanced around x=0.6 and 0.4, respectively, and as a result, Tc exhibits r
espective peaks at 24 K and 27 K against the P-substitution for As. This result demonstrates that the AFMSFs are responsible for the increase in Tc for LaFe(As_{1-x}P_x)(O_{1-y}F_y) as a primary mediator of the Cooper pairing. From a systematic comparison of AFMSFs with a series of (La_{1-z}Y_z)FeAsO_{delta} compounds in which Tc reaches 50 K for z=0.95, we remark that a moderate development of AFMSFs causes the Tc to increase up to 50 K under the condition that the local lattice parameters of FeAs tetrahedron approaches those of the regular tetrahedron. We propose that the T_c of Fe-pnictides exceeding 50 K is maximized under an intimate collaboration of the AFMSFs and other factors originating from the optimization of the local structure.
Ultrafast dynamics of graphite is investigated by time-resolved photoemission spectroscopy. We observe spectral features of direct photoexcitations, non-thermal electron distributions, and recovery dynamics occurring with two time scales having disti
nct pump-power dependences. Additionally, we find an anomalous increase of the spectral intensity around the Fermi level, and we attribute this to spectral broadenings due to coupled optical phonons in the transient. The fingerprints of the coupled optical phonons occur from the temporal region where the electronic temperature is still not definable. This implies that there is a mechanism of ultrafast-and-efficient phonon generations beyond a two-temperature model.
For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE).
Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.
