We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot
in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device
parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 {mu}s, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.
We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron anti-parallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction a
t the qubit frequency. The qubit exhibits long $T_2^*$ exceeding 1 $mu$s that is limited by dephasing due to the $^{29}$Si nuclei rather than charge noise thanks to the symmetric operation and a large micro-magnet Zeeman field gradient. The randomized benchmarking shows 99.6 % single gate fidelity which is the highest reported for singlet-triplet qubits.
Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an ideal projective measurement that does not introduce a back action on the measured observable,
known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot via an exchange-coupled ancilla qubit. The ancilla qubit, encoded in the singlet-triplet two-electron subspace, is entangled with the single spin and subsequently read out in a single shot projective measurement at a rate two orders of magnitude faster than the spin relaxation. The QND nature of the measurement protocol is evidenced by observing a monotonic increase of the readout fidelity over one hundred repetitive measurements against arbitrary input states. We extract information from the measurement record using the method of optimal inference, which is tolerant to the presence of the relaxation and dephasing. The QND measurement allows us to observe spontaneous spin flips (quantum jumps) in an isolated system with small disturbance. Combined with the high-fidelity control of spin qubits, these results pave the way for various measurement-based quantum state manipulations including quantum error correction protocols.
Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressabl
e manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantum dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.
