We report on our investigation of the crystal structure of arsenic under compression, focusing primarily on the pressure-induced A7 to simple cubic (sc) phase transition. The two-atom rhombohedral unit cell is subjected to pressures ranging from 0 GP
a to 200 GPa; for each given pressure, cell lengths and angles, as well as atomic positions, are allowed to vary until the fully relaxed structure is obtained. We find that the nearest and next-nearest neighbor distances give the clearest indication of the occurrence of a structural phase transition. Calculations are performed using the local density approximation (LDA) and the PBE and PW91 generalized gradient approximations (GGA-PBE and GGA-PW91) for the exchange-correlation functional. The A7 to sc transition is found to occur at 21+/-1 GPa in the LDA, at 28+/-1 GPa in the GGA-PBE and at 29+/-1 GPa in the GGA-PW91; no volume discontinuity is observed across the transition in any of the three cases. We use k-point grids as dense as 66X66X66 to enable us to present reliably converged results for the A7 to sc transition of arsenic.
The material presented here is supplementary to the article entitled: Density-functional investigation of the rhombohedral to simple cubic phase transition of arsenic; it deals with the convergence issues involved in studying a semi-metal to metal st
ructural phase transition such as the A7 to sc transition of arsenic.
While the intrinsic anomalous Hall conductivity is normally written in terms of an integral of the electronic Berry curvature over the occupied portions of the Brillouin zone, Haldane has recently pointed out that this quantity (or more precisely, it
s ``non-quantized part) may alternatively be expressed as a Fermi-surface property. Here we present an {it ab-initio} approach for computing the anomalous Hall conductivity that takes advantage of this observation by converting the integral over the Fermi sea into a more efficient integral on the Fermi surface only. First, a conventional electronic-structure calculation is performed with spin-orbit interaction included. Maximally-localized Wannier functions are then constructed by a post-processing step in order to convert the {it ab-initio} electronic structure around the Fermi level into a tight-binding-like form. Working in the Wannier representation, the Brillouin zone is sampled on a large number of equally spaced parallel slices oriented normal to the total magnetization. On each slice, we find the intersections of the Fermi-surface sheets with the slice by standard contour methods, organize these into a set of closed loops, and compute the Berry phases of the Bloch states as they are transported around these loops. The anomalous Hall conductivity is proportional to the sum of the Berry phases of all the loops on all the slices. Illustrative calculations are performed for Fe, Co and Ni.
A method to calculate NMR J-coupling constants from first principles in extended systems is presented. It is based on density functional theory and is formulated within a planewave-pseudopotential framework. The all-electron properties are recovered
using the projector augmented wave approach. The method is validated by comparison with existing quantum chemical calculations of solution-state systems and with experimental data. The approach has been applied to verify measured J-coupling in a silicophosphate structure, Si5O(PO4)6
