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To achieve and utilize the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TI),it is necessary to open a Dirac-mass gap in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely used approach. But it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr$_{0.08}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.92}$Te$_3$. Simultaneous visualization of the Dirac-mass gap $Delta(r)$ reveals its intense disorder, which we demonstrate directly is related to fluctuations in $n(r)$, the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of $Delta(r)$ consistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship $Delta(r)propto n(r)$ is confirmed throughout, and exhibits an electron-dopant interaction energy $J^*$=145$meVcdot nm^2$. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal-symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.
The intriguing idea that strongly interacting electrons can generate spatially inhomogeneous electronic liquid crystalline phases is over a decade old, but these systems still represent an unexplored frontier of condensed matter physics. One reason i s that visualization of the many-body quantum states generated by the strong interactions, and of the resulting electronic phases, has not been achieved. Soft condensed matter physics was transformed by microscopies that allowed imaging of real-space structures and patterns. A candidate technique for obtaining equivalent data in the purely electronic systems is Spectroscopic Imaging Scanning Tunneling Microscopy (SI-STM). The core challenge is to detect the tenuous but heavy k-space components of the many-body electronic state simultaneously with its r-space constituents. Sr3Ru2O7 provides a particularly exciting opportunity to address these issues. It possesses (i) a very strongly renormalized heavy d-electron Fermi liquid and (ii) exhibits a field-induced transition to an electronic liquid crystalline phase. Finally, as a layered compound, it can be cleaved to present an excellent surface for SI-STM.
122 - J.W. Alldredge 2007
A complete knowledge of its excitation spectrum could greatly benefit efforts to understand the unusual form of superconductivity occurring in the lightly hole-doped copper-oxides. Here we use tunnelling spectroscopy to measure the Tto 0 spectrum of electronic excitations N(E) over a wide range of hole-density p in superconducting Bi_{2}Sr_{2}CaCu_{2}O_{8+/delta}. We introduce a parameterization for N(E) based upon an anisotropic energy-gap /Delta (vec k)=/Delta_{1}(Cos(k_{x})-Cos(k_{y}))/2 plus an effective scattering rate which varies linearly with energy /Gamma_{2}(E) . We demonstrate that this form of N(E) allows successful fitting of differential tunnelling conductance spectra throughout much of the Bi_{2}Sr_{2}CaCu_{2}O_{8+/delta} phase diagram. The resulting average /Delta_{1} values rise with falling p along the familiar trajectory of excitations to the pseudogap energy, while the key scattering rate /Gamma_{2}^{*}=/Gamma_{2}(E=/Delta_{1}) increases from below ~1meV to a value approaching 25meV as the system is underdoped from p~16% to p<10%. Thus, a single, particle-hole symmetric, anisotropic energy-gap, in combination with a strongly energy and doping dependent effective scattering rate, can describe the spectra without recourse to another ordered state. Nevertheless we also observe two distinct and diverging energy scales in the system: the energy-gap maximum /Delta_{1} and a lower energy scale /Delta_{0} separating the spatially homogeneous and heterogeneous electronic structures.
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